Arykov Vadim Stanislavovich
Articles:
- Design of non-precious metals GaAs pHEMT with submicron length T-shape gate
- Development of power field effect transistors with submicron T-shape Schottky gate obtained by optical lithography technique
- Field effect transistor with submicron T-shaped Schottky gate fabricated by using sidewall dielectric
- Inductively coupled plasma etching of InP/InGaAs heterostructure for optical waveguide structures
- The development of slot via holes fabrication technology in GaAs substrate with use of TCAD
- Ultra-wideband electro-optical modulator with an integrated laser
-2025_%D0%BE%D0%B1%D0%BB-1.png)
