Arykov Vadim Stanislavovich
Articles:
- Design of non-precious metals GaAs pHEMT with submicron length T-shape gate
- Development of power field effect transistors with submicron T-shape Schottky gate obtained by optical lithography technique
- Field effect transistor with submicron T-shaped Schottky gate fabricated by using sidewall dielectric
- Inductively coupled plasma etching of InP/InGaAs heterostructure for optical waveguide structures
- The development of slot via holes fabrication technology in GaAs substrate with use of TCAD
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