Abstract: The via holes fabrication technology is presented. Via holes with diameter of 30-40 microns have vertical sidewalls and can be etched in GaAs substrate with thickness from 50 to 200 microns. The modeling of the etching process was performed with use of TCAD.
Keywords: via holes, field-effect transistor, modeling, tcad
For citation:
Stepanenko M. V., Arykov V. S., Yuschenko A. M., Plotnikova A. Yu. The development of slot via holes fabrication technology in GaAs substrate with use of TCAD. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 1(31), pp. 106–108.
Authors and copyright holders:
- Stepanenko M. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Arykov V. S. , IM Tech LLC (Tomsk, Russia);, Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Yuschenko A. M.
- Plotnikova A. Yu.
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