Development of power field effect transistors with submicron T-shape Schottky gate obtained by optical lithography technique

Abstract: The results of power field effect transistors development with the use of optical lithography technique for obtaining 2 m length T-shape Schottky gate are presented. The technique is based on creation of a narrow gap in dielectrics, which defines the gate size.

Keywords: field-effect transistor with schottky gate, optical lithography

For citation:
Arykov V. S., Gavrilova A. M. Development of power field effect transistors with submicron T-shape Schottky gate obtained by optical lithography technique. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 86–88.