Development of power field effect transistors with submicron T-shape Schottky gate obtained by optical lithography technique

Download article in PDF format

Authors: Arykov V. S., Gavrilova A. M.

Annotation: The results of power field effect transistors development with the use of optical lithography technique for obtaining 2 m length T-shape Schottky gate are presented. The technique is based on creation of a narrow gap in dielectrics, which defines the gate size.

Keywords: field-effect transistor with schottky gate, optical lithography