Abstract: The design results of completely Cu-metalized GaAs pHEMT with Cu/Ge based ohmic contacts and 150 nm T-shape Ti/Mo/Cu gate are presented. The designed Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, off-state gate-drain breakdown of 7 V, and transconductance maximum value of 320 mS/mm at V DS = 3V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cut-off frequency of the copper metalized device was about 60 GHz at V ds = 3 V, and maximum frequency of oscillations was beyond 100 GHz.
Keywords: gaas, phemt, t-gate, ohmic contact
Authors and copyright holders:
—
For citation:
Erofeev E. V., Kagadey V. A., Ishutkin S. V., Nosaeva K. S., Anischenko E. V., Arykov V. S. Design of non-precious metals GaAs pHEMT with submicron length T-shape gate. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 183–186.
Last issue
-2025-1.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
