Erofeev Evgeniy Viktorovich
Articles:
- Design of non-precious metals GaAs pHEMT with submicron length T-shape gate
- Modeling the influence of heterostructure barrier layer thickness on the breakdown voltage of high electron mobility transistor
- Ohmic contacts to n + -GaAs with sidewall diffusion barrier
- The cleaning method for nanostructures of integrated circuits
- The fabrication of GaAs Cu- and Al-metalized high electron mobility transistors
- The formation of copper germanium alloys by the low temperature atomic hydrogen treatment
- The method of fabrication of submicron gate for the GaAs UHF high electron mobility transistors
- Thermal stability of base metal Cu/Ge metallized GaAs pHEMT
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