The cleaning method for nanostructures of integrated circuits

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Authors: Fedin I. V., Erofeev E. V.

Annotation: In the paper we investigate the possibility of improvement the parameters of Ge/Cu ohmic contacts to n-i-GaAs by the modification of a GaAs surface in an atomic hydrogen stream, and also by means of influence by the ultraviolet radiation generated by KrCl of exilamp, on the hydrogenated surface. It is shown that processing of a previously hydrogenated surface of n-i-GaAs by ultraviolet radiation with length of a wave λ = 222 nm and density of capacity of radiation of P = 12 mW⋅cm⁻², and carried out in vacuum before deposition of Ge/Cu ohmic contacts metallization, allows to reduce the specific contact resistance by 3 times.

Keywords: gaas, ohmic contact, atomic hydrogen, ultraviolet