Abstract: In the article we investigated the behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at its treatment in atomic hydrogen. It was discovered, that such processing in an atomic hydrogen flow with density 10^15 at.·cm2·s–1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and polycrystalline CuGe alloy formation with the vertically oriented grains.
Keywords: thin films, copper germanium alloy, atomic hydrogen, diffusion, sheet resistance
Authors and copyright holders:
—
For citation:
Kazimirov A. I., Erofeev E. V., Kagadey V. A. The formation of copper germanium alloys by the low temperature atomic hydrogen treatment. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 2. pp. 68–72.
Last issue
-2025-1.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
