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Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki
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Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki / Kagadey Valeriy Alekseevich

Kagadey Valeriy Alekseevich

Articles:

  • Design of non-precious metals GaAs pHEMT with submicron length T-shape gate
  • GaN-power micromodule based on an AlN-DBC-substrate with metallized vias
  • High power density DC-DC-converter based on GaN mul-ti-chip power micromodule for autonomous power supply systems
  • Ohmic contacts to n + -GaAs with sidewall diffusion barrier
  • The formation of copper germanium alloys by the low temperature atomic hydrogen treatment
  • Thermal stability of base metal Cu/Ge metallized GaAs pHEMT
  • Requirements for registration of articles
  • Paper template
Last issue
Doklady TUSUR
№ 2, Vol. 29, 2026
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Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki

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