Proceedings of TUSUR University / Archive / Issue of Journal № 1, t. 29, 2026 / High power density DC-DC-converter based on GaN mul-ti-chip power micromodule for autonomous power supply systems

High power density DC-DC-converter based on GaN mul-ti-chip power micromodule for autonomous power supply systems

DOI: 10.21293/1818-0442-2026-29-1-185-192

Download article in PDF format

JATS xml

Abstract: Relevance. Autonomous power supply systems for spacecraft and unmanned aerial vehicles require switching mode power supplies characterized by increased power density. The increase in power density can be achieved by improving efficiency and reducing the size of electronic components in DC-DC-converters. The use of power GaN-transistors and micromodules based on them opens up new prospects for increasing the conversion frequency and, consequently, reducing the size and increasing the power density of DC-DC converters. Purpose. The development and experimental study of a high-power density forward DC-DC-converter with an active clamp and synchronous rectifier based on GaN multi-chip power micromodules, intended for use in autonomous power supply systems. Methods. Simulation of the DC-DC-converter was performed using LTspice. The prototype of the DC-DC-converter was verified using modern measurement equipment. Novelty. A technical solution for a high-frequency forward DC-DC-converter with an active clamp based on power GaN multi-chip power micromodules is presented for the first time; their application allowed for an increase in the power density. Results. The operating mode of the DC-DC-converter with an output voltage of 12 V was tuned, achieving stable operation at a frequency of 800 kHz over an input voltage range of 18–36 V at a load power of up to 72 W. Over the entire input voltage range, the efficiency exceeded 90%. The developed DC-DC-converter achieved a power density of 4.77 kW/dm³. A comparison was made between the achieved parameters of the DC-DC-converter and those of commercially available silicon-based counterparts, as well as GaN-based equivalents presented in scientific publications. Practical significance. The use of the developed high-density DC-DC-converter in autonomous power supply systems for radio equipment of spacecraft and unmanned aerial vehicles will increase their power density.

Keywords: GaN, forward converter, high power density DC-DC-converter, high-frequency DC-DC-converter, GaN multichip power micromodules, power density, specific power

For citation:
Polyntsev E. S., Bartenev A. I., Kodorova I. Yu., Aksyonov A. A., Kagadey V. A. High power density DC-DC-converter based on GaN mul-ti-chip power micromodule for autonomous power supply systems. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2026, vol. 29, no. 1, pp. 185–192. DOI: 10.21293/1818-0442-2026-29-1-185-192

Authors and copyright holders:

Polyntsev E. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Bartenev A. I. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Kodorova I. Yu. , Tomsk branch of JSC «Radar mms» (Tomsk, Russia)
Aksyonov A. A. , Institute of High Current Electronics SB RAS (Tomsk, Russia)
Kagadey V. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

1. Hall C., Pastra C.L., Burrell A., Gladin J., Mavris D.N. Project-ing power converter specific power through 2050 for aerospace applications. 2022 IEEE Transportation Electrification Confer-ence & Expo (ITEC), Anaheim, California, IEEE, 2022, pp. 760–765.
2. Schiestl M., Marcolini F., Incurvati M., Capponi F.G., Stärz R., Caricchi F. Development of a high power density drive system for unmanned aerial vehicles. IEEE Transactions on Power Electronics, 2020, vol. 36, no. 3, pp. 3159–3171.
3. Bespalov V., Egorkin V., Zhuravlev M. [Gallium ni-tride: a new approach for efficient power conversion]. Electron-ics: Science, Technology, Business, 2022, no. 3, pp. 150–157 (in Russ.).
4. Buffolo M., Favero D., Marcuzzi A., De Santi C., Meneghesso G., Zanoni E., Meneghini M. Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives. IEEE Transactions on Electron Devices, 2024, vol. 71, no. 3, p. 1344–1355.
5. Egorkin V.I., Obolenskiy S.V., Zemlyakov V.E., Zaytsev A.A., Garmash V.I. Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process. Technical Physics Letters, 2021, vol. 48, no. 13. pp. 6–8.
6. Emon A.I., Mustafeez-ul-Hassan, Mirza A.B., Kaplun J., Vala S.S., Luo F. A review of high-speed GaN power mod-ules: State of the art, challenges, and solutions. IEEE journal of emerging and selected topics in power electronics, 2022, vol. 11, no. 3, pp. 2707–2729.
7. Mortazavizadeh S.A., Palazzo S., Amendola A., De Santis E., Ruzza D.D., Panariello G., Sanseverino A., Velardi F., Busatto G. High frequency, high efficiency, and high power density GaN-based LLC resonant converter: State-of-the-art and perspectives. Applied Sciences, 2021, vol. 11, no. 23, pp. 11350.
8. Ostrirov V.N., Yakovenko M.S., Repetsky D.V., Mil-skiy K.V., Krasnov V.V. [Experience in Development of an On-Board Electric System Power Supply Based on Advanced Elec-tronic Components]. Vestnik Moskovskogo Energeticheskogo Instituta, 2020, no 4, pp. 113–121 (in Russ.).
9. Huang X., Feng J., Du W., Lee F.C., Li Q. Design consideration of MHz active clamp flyback converter with GaN devices for low power adapter application. 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Cali-fornia, USA: IEEE, 2016, pp. 2334–2341.
10. Tong Q. Design of a synchronous rectifier flyback DC-DC converter using GaN FETs for commercial aerospace applications. 2020 IEEE 3rd International Conference on Elec-tronics Technology (ICET), Online: IEEE, 2020, pp. 308–313.
11. Bulut Ö., Aydemir M.T. Design and loss analysis of a 200-W GaN based active clamp forward converter. 2018 5th International Conference on Electrical and Electronic Engineer-ing (ICEEE), Istanbul, Turkey, IEEE, 2018, pp. 97–100.
12. Maqueda M.G., Svikovic V. High Efficiency GaN Based Resonant Reset Forward Converter with Synchronous Rectification for Space Applications. 2023 13th European Space Power Conference (ESPC), Alicante, Spain, IEEE, 2023. – P. 1–8.
13. Polyntsev E.S., Kodorova I.Y., Aksenov A.A., Ka-gadey V.A. Design and Optimization of 100 V GaN Multi-chip Power Micromodule Based on AlN DBC Substrate. 2024 IEEE 25th International Conference of Young Professionals in Elec-tron Devices and Materials (EDM), Altai Republic, Russia, IEEE, 2024, pp. 1180–1184.
14. Kodorova I.Y., Polyntsev E.S., Kagadey V.A. Ther-mal Analysis of Packaging Solution for GaN Multi-chip Power Micromodule. 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM), Altai Republic, Russia, IEEE, 2024, pp. 1230–1233.
15. Polyntsev E.S., Bartenev A.I., Kodorova I.Y., Aksenov A.A., Kagadey V.A. High Frequency 1 MHz 72 W Forward Converter with Active Clamp and Synchronous Recti-fier Based on GaN Multichip Power Micromodules. 2025 IEEE 26th International Conference of Young Professionals in Elec-tron Devices and Materials (EDM), Altai Republic, Russia IEEE, 2025, pp. 790–795.