Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki / Archive / Issue of Journal № 2, Vol. 29, 2026 / GaN-power micromodule based on an AlN-DBC-substrate with metallized vias

GaN-power micromodule based on an AlN-DBC-substrate with metallized vias

DOI: 10.21293/1818-0442-2026-29-2-179-188

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Abstract: Relevance. The high switching speed and low conduction losses of GaN-transistors make them one of the most promising electronic component technologies for switched-mode power converters. However, their widespread adoption is constrained by two key factors: the need to minimize parasitic interconnection inductances and the requirement to ensure efficient heat dissipation. Purpose of the study. The study aims to develop and experimentally validate a GaN power micromodule in which two GaN transistors, a gate driver, and passive components are mounted on an AlN direct-bonded copper (DBC) substrate with metallized vias, providing low parasitic inductance of the interconnections and low thermal resistance of the micromodule. Methods. Circuit-level simulation of electrical characteristics was performed using LTspice. The ceramic substrate layout was designed in Altium Designer. Electrical and thermal modeling were performed in the Ansys Electronics Desktop engineering analysis platform. The Q3D module was used to extract the parasitic inductances of the interconnects, and the Icepak module was employed to calculate the temperature distribution and determine the thermal resistance of the module. Experimental validation included double-pulse testing to evaluate switching overvoltages and peak currents, along with infrared thermography of the operating prototype. Scientific Novelty. A novel GaN-power-micromodule based on an AlN ceramic substrate with double-sided copper metallization and plated vias is proposed. The proposed design is characterized by reduced gate-loop and power-loop parasitic inductances of the GaN transistors, as well as lower thermal resistance of the micromodule. Results. The presented micromodule incorporates two independent channels, each providing a current of up to 7 A, and an operating voltage of at least 100 V. It is shown that for the proposed micromodule design, the inductance in the gate loop of both channels has a characteristic value of 2.6 nH and 2.2 nH, while the additional parasitic inductance in the power loop of the transistor does not exceed 0.5 nH. According to the simulation and experimental results, the transistor drain overvoltage did not exceed 20 V at a peak current of 125 A in the inductive load. The junction-to-ambient thermal resistance was verified by simulation and experimental results achieving 36 K/W. Practical significance. The proposed GaN power micromodule is intended for use in high-density low-voltage switched-mode DC/DC-converters operating at frequencies above 0.5 MHz, enabling an increase in their power density.

Keywords: power GaN-electronics, GaN-multichip micromodule, parasitic parameters extraction, DBC-ceramic substrate, metallized vias, low parasitic inductance, hybrid integration

For citation:
Polyntsev E. S., Kodorova I. Yu., Bartenev A. I., Aksenov A. A., Vorobiev M. S., Kagadey V. A. GaN-power micromodule based on an AlN-DBC-substrate with metallized vias. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2026, vol. 29, no. 2, pp. 179–188. DOI: 10.21293/1818-0442-2026-29-2-179-188

Authors and copyright holders:

Polyntsev E. S. , Tomsk State University of Control Systems and Radioelectronics (TUSUR)
Kodorova I. Yu. , JSC Radar MMS
Bartenev A. I. , Tomsk State University of Control Systems and Radioelectronics (TUSUR)
Aksenov A. A. , Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences
Vorobiev M. S. , National Research Tomsk Polytechnic University
Kagadey V. A. , Tomsk State University of Control Systems and Radioelectronics (TUSUR)

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Doklady TUSUR
№ 2, Vol. 29, 2026

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