The method of fabrication of submicron gate for the GaAs UHF high electron mobility transistors

Abstract: There are presented the method of fabrication of the submicron gate with sub 70 nm length using tilt thin film deposition. The gate length was defined from the tilt angle of substrate. The mathematic modeling was performed to fabricate gates with 52, 40 and 30 nm lengths via mask dimensions of about 200 nm.

Keywords: submicron gate, tilt deposition, gaas, uhf transistor

For citation:
Erofeev E. V., Kazimirov A. I., Kulinich I. V. The method of fabrication of submicron gate for the GaAs UHF high electron mobility transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2012, no. 2(26), – p. 1. pp. 53–56.