Inductively coupled plasma etching of InP/InGaAs heterostructure for optical waveguide structures
DOI: 10.21293/1818-0442-2018-21-4-28-32
Abstract: In the paper are shown the results of the development of inductively coupled plasma etching process of InP / InGaAs in the gas mixture Cl 2 /Ar/N 2 . The dependences of the influence of process parameters on the profile and surface roughness of the waveguide structures are shown.
Keywords: optoelectronics, indium phosphide, plasma- chemical etching
Authors and copyright holders:
—
For citation:
Ishutkin S. V., Arykov V. S., Zhidik Yu. S., Troyan P. E. Inductively coupled plasma etching of InP/InGaAs heterostructure for optical waveguide structures. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2018, vol. 21, no. 4, pp. 28–32. DOI: 10.21293/1818-0442-2018-21-4-28-32
Last issue
-2025-1.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
