Inductively coupled plasma etching of InP/InGaAs heterostructure for optical waveguide structures

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Authors: Ishutkin S. V., Arykov V. S., Zhidik Yu. S., Troyan P. E.

Annotation: In the paper are shown the results of the development of inductively coupled plasma etching process of InP / InGaAs in the gas mixture Cl 2 /Ar/N 2 . The dependences of the influence of process parameters on the profile and surface roughness of the waveguide structures are shown.

Keywords: optoelectronics, indium phosphide, plasma- chemical etching