Field effect transistor with submicron T-shaped Schottky gate fabricated by using sidewall dielectric

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Authors: Stepanenko M. V., Arykov V. S., Yuschenko A. M., Plotnikova A. Yu., Ishutkin S. V.

Annotation: The results of T-shaped Schottky gate fabrication with use of optical lithography are presented. The technique of gate formation is based on etching of a narrow gap in the first dielectric layer, subsequent deposition and etching of the second dielectric layer such that it remains on the gap sidewalls. Produced dielectric layer structure defines the gate length. Using this technique the gate length of 180 nm was obtained.

Keywords: field-effect transistor, optical lithography, sidewall dielectric, plasma etching, deposition