Моделирование влияния толщины барьерного слоя гетероструктуры на напряжение пробоя транзистора с высокой подвижностью электронов

Авторы и правообладатели:

• Шестерикова Д. А. , Томский государственный университет систем управления и радиоэлектроники (Томск, Россия)
• Шестериков А. Е. , Томский государственный университет систем управления и радиоэлектроники (Томск, Россия)
• Ерофеев Е. В. , АО «НПФ «Микран» (Томск, Россия)
• Троян П. Е. , Томский государственный университет систем управления и радиоэлектроники (Томск, Россия)

• 1. Uko M. A 23–28 GHz pHEMT MMIC low-noise amplifier for satellite-cellular convergence applications / M. Uko, S. Ekpo // International Review of Aerospace Engineering Journal. – 2021. – Vol. 14, No. 5. – P. 1–10.
• 2. Laaouane H. Design of a low noise amplifier based on E-PHEMT transistors for 4G applications / H. Laaouane, S. Bri, J. Foshi // Journal on Computer Science and Information Technologies. – 2021. – Vol. 5, No. 2. – P. 41–52.
• 3. Design and Development of Two-stage Low-noise Amplifier (LNA) using E-pHEMT Technology for C-band Application / F. Kamsaini, M.S. Razalli, S.Z. Ibrahim, M.Z. Ilyas // IOP Conference Series: Materials Science and Engineering. – IOP Publishing. – 2020. – Vol. 864, No. 1. – P. 012126.
• 4. Wild A. Microelectronics in the 21st Century: Technology, Economics, Policies // 2022 International Semiconductor Conference (CAS), Poiana Brasov, Romania, 2022. – P. 3–12.
• 5. Zheng R. Research on damage effects of pHEMT low noise amplifiers under HPM injection / R. Zheng, Z. Xue, C. Li, S. Tang // IEICE Electronics Express. – 2024. – P. 21.20240525.
• 6. Small-signal and noise GaAs pHEMT modeling for low noise amplifier design / A.A. Popov, D.V. Bilevich, A.A. Metel, A.S. Salnikov, I.M. Dobush, A.E. Goryainov, A.A. Kalentyev // Journal of Physics: Conference Series. – IOP Publishing. – 2020. – Vol. 1499, No. 1. – P. 012033.
• 7. Study on high power microwave nonlinear effects and degradation characteristics of C-band low noise amplifier / L. Fuxing, C. Changchun, W. Han, W. Lei, L. Qishuai, A. Qi, Y. Yintang // Microelectronics Reliability. – 2022. – Vol. 128. – P. 114427.
• 8. Menozzi R. Off-state breakdown of GaAs PHEMTs: review and new data // IEEE Transactions on Device and Materials Reliability. – 2004. – Vol. 4, No. 1. – P. 54–62.
• 9. An Overview of Nanowire Field-Effect Transistors for Future Nanoscale Integrated Circuits / J. Ajayan, D. Nirmal, P. Mohankumar, S. Tayal // Nanoelectronics for Next-Generation Integrated Circuits. – 2022. – P. 81–114.
• 10. Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications / J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J.C. Pravin, D. Nirmal // AEUInternational Journal of Electronics and Communications. – 2018. – Vol. 84. – P. 387–393.
• 11. New Submicron Low Gate Leakage In0.52Al0.48AsIn0.7Ga0.3As pHEMT for Low-Noise Applications / M.F. Packeer Mohamed, M.F. Mohamed Omar, M.F. Akbar Jalaludin Khan, N.A. Ghazali, M.H. Hairi, S. Falina, M.S.N. Samsol Baharin // Micromachines. – 2021. – Vol. 12, No. 12. – P. 1497.
• 12. Bahl S.R A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs / S.R. Bahl, J.A. Del Alamo // IEEE Transactions on Electron devices. – 1993. – Vol. 40, No. 8. – P. 1558–1560.
• 13. Шестериков А.Е. Исследование конструктивнотехнологических особенностей изготовления малошумящих GaAs-транзисторов с длиной T-затвора 150 нм для систем передачи информации / А.Е. Шестериков, Д.А. Шестерикова, Е.В. Ерофеев // Физика и техника полупроводников. – 2024. – Т. 58, № 3. – С. 149–155.
• 14. A review of hydrodynamic and energy-transport models for semiconductor device simulation / T. Grasser, T.W. Tang, H. Kosina, S. Selberherr // Proceedings of the IEEE. – 2003. – Vol. 91, No. 2. – P. 251–274.
• 15. Modelling of small-signal response and electronic noise in semiconductor high-field transport / L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani // Semiconductor science and technology. – 1997. – Vol. 12, No. 2. – P. 141.
• 16. Khanna V.K. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications // Progress in quantum electronics. – 2005. – Vol. 29, No. 2. – P. 59–163.
• 17. Palma J.F. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. – Boston: University of Massachusetts Lowell, 2011. – 253 p.