Modeling the influence of heterostructure barrier layer thickness on the breakdown voltage of high electron mobility transistor

Authors and copyright holders:

• Shesterikova D. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
• Shesterikov A. E. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
• Erofeev E. V. , JSC «NPF Micran» (Tomsk, Russia)
• Troyan P. E. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

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