Modeling the influence of heterostructure barrier layer thickness on the breakdown voltage of high electron mobility transistor

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Authors: Shesterikova D. A., Shesterikov A. E., Erofeev E. V., Troyan P. E.

Annotation: The paper presents the results of modeling the breakdown occurrence in the heterostructure of a high electron mobility transistor at different thicknesses of the AlGaAs barrier layer. As a result of the study, it was revealed that the breakdown voltage, measured by the drain current injection method, is 8,75 V at the specified parameters of the heterostructure and remains unchanged when the thickness of the barrier layer changes

Keywords: barrier layer, drain current injection, phemt, heterostructure, breakdown voltage