Modeling the influence of heterostructure barrier layer thickness on the breakdown voltage of high electron mobility transistor
DOI: 10.21293/1818-0442-2025-28-1-81-85
Abstract: The paper presents the results of modeling the breakdown occurrence in the heterostructure of a high electron mobility transistor at different thicknesses of the AlGaAs barrier layer. As a result of the study, it was revealed that the breakdown voltage, measured by the drain current injection method, is 8,75 V at the specified parameters of the heterostructure and remains unchanged when the thickness of the barrier layer changes
Keywords: barrier layer, drain current injection, phemt, heterostructure, breakdown voltage
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For citation:
Shesterikova D. A., Shesterikov A. E., Erofeev E. V., Troyan P. E. Modeling the influence of heterostructure barrier layer thickness on the breakdown voltage of high electron mobility transistor. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2025, vol. 28, no. 1, pp. 81–85. DOI: 10.21293/1818-0442-2025-28-1-81-85
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