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Proceedings of TUSUR University / Gnatyuk Dmitriy Leonidovich

Gnatyuk Dmitriy Leonidovich

Articles:

Design of 30-37.5 GHz MMIC low noise amplifier based on GaAs pHEMT heterostructures
Development of a set of X-band MMIC low-noise amplifiers based on 0.15 m GaAs pHEMT tech- nology
In 0,52 Al 0,48 As/In 0,53 Ga 0,47 As/In 0,52 Al 0,48 As/InP HEMT with Maximum Frequency of Oscillation up to 323 GHz
Ka-band coplanar MMIC amplifiers based on 0.13 m GaAs mHEMT process
Ka-band MMIC low noise amplifiers on GaAs pHEMT heterostructures

Last issue

Доклады ТУСУР – выпуск № 3, t. 27 2024г.

Proceedings of TUSUR University
№ 3, t. 27, 2024

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