Abstract: The results of designing and fabrication of the Russian first set of 2- and 3-stage X-band MMIC lownoise amplifiers (LNAs), which are based on 0,15 m pHEMT GaAs technology, are presented. The amplifiers cover the frequency range from 6 GHz to 12 GHz with the gain of 20±1 (28±1) dB and have the noise figure of 1.4 (1.6) dB, respectively. The use of interactive “visual” techniques and corresponding software tools allows to implement the fast and high-performance LNA design.
Keywords: mmic, technology, phemt, low-noise amplifier, x-band, automatized synthesis, visual design
For citation:
Mokerov V. G., Babak L. I., Fedorov Yu. V., Cherkashin M. V., Sheerman F. I., Bugaev A. S., Kuznetsov A. L., Gnatyuk D. L. Development of a set of X-band MMIC low-noise amplifiers based on 0.15 m GaAs pHEMT tech- nology. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 105–117.
Authors and copyright holders:
- Mokerov V. G.
- Babak L. I.
- Fedorov Yu. V.
- Cherkashin M. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Sheerman F. I.
- Bugaev A. S.
- Kuznetsov A. L.
- Gnatyuk D. L.
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