Fedorov Yuriy Vladimirovich
Articles:
- Design of 30-37.5 GHz MMIC low noise amplifier based on GaAs pHEMT heterostructures
- Development of a set of X-band MMIC low-noise amplifiers based on 0.15 m GaAs pHEMT tech- nology
- In 0,52 Al 0,48 As/In 0,53 Ga 0,47 As/In 0,52 Al 0,48 As/InP HEMT with Maximum Frequency of Oscillation up to 323 GHz
- Ka-band coplanar MMIC amplifiers based on 0.13 m GaAs mHEMT process
- Ka-band MMIC low noise amplifiers on GaAs pHEMT heterostructures
- Ka-band monolithic coplanar amplifier based on the domestic heterojunction GaAs foundry
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