Design of 30-37.5 GHz MMIC low noise amplifier based on GaAs pHEMT heterostructures

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Authors: Cherkashin M. V., Dobush I. M., Babak L. I., Fedorov Yu. V., Gnatyuk D. L.

Annotation: The results of designing and experimental investigations of 30-37.5 GHz three-stage MMIC low-noise amplifier are described. While designing, a technique and software tools for the visual design of microwave transistor amplifiers have been used. The amplifier is produced based on the domestic 0.15 m GaAs pHEMT process.

Keywords: mmic, low-noise amplifier, ka-band, phemt, visual design