Characterization of high power microwave transistors

Аннотация: This paper describes up-to-date nonlinear measurements techniques for characterization and modelling of high power microwave transistors, from pulsed I(V) to time domain load-pull measurements. The described toolkit is well-suited for study of weak nonlinear regimes of transistors as long as long-term memory effects taking place into transistors.

Ключевые слова: characterization, high power microwave transistor, microwave measurements

Библиография статьи:
Teyssier Jean-Pierre Characterization of high power microwave transistors / Jean-Pierre Teyssier // Доклады Томского государственного университета систем управления и радиоэлектроники. – 2010. – № 2(22). – Ч. 1. – С. 127–136.