Abstract: This paper describes up-to-date nonlinear measurements techniques for characterization and modelling of high power microwave transistors, from pulsed I(V) to time domain load-pull measurements. The described toolkit is well-suited for study of weak nonlinear regimes of transistors as long as long-term memory effects taking place into transistors.
Keywords: characterization, high power microwave transistor, microwave measurements
Authors and copyright holders:
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For citation:
Teyssier J. Characterization of high power microwave transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 127–136.
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