Abstract: A new technique for building of scalable models of passive MMIC elements is presented. It allows to decrease a number of required test structures. The principal technique feature is that it uses measured S-parameters of real test elements as well as «virtual» S-parameters of elements calculated from EM simulation. In addition, electrophysical parameters of materials necessary for EM simulation are obtained using the extraction of simple equivalent circuits of measured elements and analysis of physical equations. The technique is applied to con- structing a scalable model of a thin-film GaAs MMIC resistor.
Keywords: gaas, mmic, monolithic thin-film resistor, scalable model, em simulation
For citation:
Salnikov A. S., Dobush I. M., Goryainov A. E., Babak L. I. Scalable model building of a monolithic thin-film resistor based on RF measurement and electromagnetic simulation. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 3(33), pp. 109–117.
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