Download article in PDF format
Authors: Yuschenko A. Yu., Ayzenshtat G. I., Bozhkov V. G., Babak L. I., Dobush I. M., Salnikov A. S.
Annotation: The designing results of 0.3 m GaAs PHEMT transistor are presented. The equivalent circuit parameters of the manufactured transistor are given. The transistor parameters are compared with the same ones of a foreign analogue
Keywords: high electron mobility transistor, small-signal model
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Proceedings of TUSUR University
Editor’s Office: 40 Lenina Prospect, office 310/2, 634050, Tomsk, Russia Phone: + 7 (3822) 51-21-21 vnmas@tusur.ru
Any use of texts or graphics published on journal.tusur.ru must be accompanied by an active hyperlink to the TUSUR site.
Это произведение доступно по
лицензии Creative Commons «Attribution» («Атрибуция») 4.0 Всемирная
.
