Abstract: The designing results of 0.3 m GaAs PHEMT transistor are presented. The equivalent circuit parameters of the manufactured transistor are given. The transistor parameters are compared with the same ones of a foreign analogue
Keywords: high electron mobility transistor, small-signal model
Authors and copyright holders:
—
For citation:
Yuschenko A. Yu., Ayzenshtat G. I., Bozhkov V. G., Babak L. I., Dobush I. M., Salnikov A. S. Microwave Pseudomorphic High Electron Mobility Transistor. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 59–61.
Last issue
-2025-1.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
