Microwave Pseudomorphic High Electron Mobility Transistor

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Authors: Yuschenko A. Yu., Ayzenshtat G. I., Bozhkov V. G., Babak L. I., Dobush I. M., Salnikov A. S.

Annotation: The designing results of 0.3 m GaAs PHEMT transistor are presented. The equivalent circuit parameters of the manufactured transistor are given. The transistor parameters are compared with the same ones of a foreign analogue

Keywords: high electron mobility transistor, small-signal model