Development of a scalable small-signal 0.1 µm GaAs-pHEMT-model for amplifier applications

Abstract: This work deals with the development of a 0.1-µm GaAspHEMT-model for use in EDA applications. The model is constructed using a reference transistor with a total gate width of 635 μm, which showed good accuracy under different DC operation modes in a wide frequency range. The developed model can be used to speed up and reduce the cost of the monolithic microwave integrated circuit amplifiers design in which the pHEMT transistor is the basic active element. In further studies the obtained model will be extended to develop more complex types of models, such as noise and nonlinear ones.

Keywords: microwave transistor, microwave transistor model, monolithic microwave integrated circuit, extraction of model parameters, equivalent circuit, small-signal model, linear parameters, phemt, gaas

For citation:
Dobush I. M., Dudinov K. V., Zykov D. D., Salnikov A. S., Popov A. A., Emelyanov A. M., Bragin D. S., Hayrov D. R. Development of a scalable small-signal 0.1 µm GaAs-pHEMT-model for amplifier applications. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2022, vol. 25, no. 4, pp. 37–47. DOI: 10.21293/1818-0442-2022-25-4-37-47