Impulse characteristics nanostructures of metal-dielectric-metal
DOI: 10.21293/1818-0442-2018-21-4-17-20
Abstract: Pulsed characteristics of a thin-film nanostructure based on a silicon oxynitride film point out memristor properties of the nanostructure, are considered. The current-voltage characteristics and switching of structures from a state of high resistance to a state of high conductivity in a pulsed mode are investi- gated. It is established that the switching of high resistance to high conductivity is carried out for a longer period of time compared with switching from high conductivity to high resistance. Between states of high resistance and high conductivity, a state with intermediate conductivity is possible.
Keywords: thin-film nanostructure, metal-insulator-metal, impulse response, memristor properties
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For citation:
Troyan P. E., Zelenskiy V. I., Karanskiy V. V. Impulse characteristics nanostructures of metal-dielectric-metal. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2018, vol. 21, no. 4, pp. 17–20. DOI: 10.21293/1818-0442-2018-21-4-17-20
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