Impulse characteristics nanostructures of metal-dielectric-metal

Authors: Troyan P. E., Zelenskiy V. I., Karanskiy V. V.

Annotation: Pulsed characteristics of a thin-film nanostructure based on a silicon oxynitride film point out memristor properties of the nanostructure, are considered. The current-voltage characteristics and switching of structures from a state of high resistance to a state of high conductivity in a pulsed mode are investi- gated. It is established that the switching of high resistance to high conductivity is carried out for a longer period of time compared with switching from high conductivity to high resistance. Between states of high resistance and high conductivity, a state with intermediate conductivity is possible.

Keywords: thin-film nanostructure, metal-insulator-metal, impulse response, memristor properties