Abstract: In this work a new analytical technique for bias-dependent drain resistance R d extraction is proposed. The dependences of the resistance R d vs. applied drain-source voltage V ds and gate-source voltage V gs for domestic 0.15 um GaN HEMT and 0.15 um GaAs pHEMT transistors are obtained. Small signal model with non-linear R d allowed to specify the value of other internal elements and to improve the accuracy of the S-parameter.
Keywords: small signal model, hemt, drain resistance
Authors and copyright holders:
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For citation:
Kokolov A. A., Babak L. I. The investigation of the nonlinear behavior of the drain resistance in GaN HEMT and GaAs pHEMT. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 4(34), pp. 46–51.
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