Processing technique of reception of electroconducting ITO films of a high optical transparency with low value of per-unit-area resistance

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Authors: Zhidik Yu. S., Troyan P. E.

Annotation: We developed the way of reception of transparent electroconducting ITO films which are intended for use in light-emitting diodes, and as ohmic contacts to solar cells. In the discovered technological mode of a spraying and bakeout, per-unit-area resistance of the oxide films came up to 50 Om/□ , and their transparency factor is about 90% at film thickness of 250 nanometers. The conditions of film reception are distinguished by a low influence of a heatstroke both on a film, and on a substrate that prevents their cracking.

Keywords: ito (indium tin oxide), magnetron sputtering, thermal annealing, per-unit-area resistance, an optical transparency