Processing technique of reception of electroconducting ITO films of a high optical transparency with low value of per-unit-area resistance

Download article in PDF format

Authors: Zhidik Yu. S., Troyan P. E.

Annotation: We developed the way of reception of transparent electroconducting ITO films which are intended for use in light-emitting diodes, and as ohmic contacts to solar cells. In the discovered technological mode of a spraying and bakeout, per-unit-area resistance of the oxide films came up to 50 Om/□ , and their transparency factor is about 90% at film thickness of 250 nanometers. The conditions of film reception are distinguished by a low influence of a heatstroke both on a film, and on a substrate that prevents their cracking.

Keywords: ito (indium tin oxide), magnetron sputtering, thermal annealing, per-unit-area resistance, an optical transparency

Viktor N. Maslennikov

Executive Secretary of the Editor’s Office

 Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia

  Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02

  vnmas@tusur.ru

Subscription for updates