Abstract: Possibilities of the software tool Sentaurus TCAD Synopsys for physical simulation of HEMTnanoheterostructures and microwave transistors are described and investigated. Simulation results of various AlGaN/GaN HEMT-nanoheterostructure constructions with two-dimensional electron gas as well as high-power microwave transistors based on these heterostructures are presented. The ways for improving characteristics of AlGaN/GaN HEMT-heterostructures and devices are shown. The simulation results are confirmed by experimental measurement of produced test GaN HEMT-transistors with a gate length of 1 micron.
Keywords: gan/algan, hemt-nanoheterostructure, construction, microwave characteristics, iv characteristics, physical simulation, sentaurus tcad synopsys
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For citation:
Torhov N. A., Babak L. I., Bozhkov V. G., Razzhuvalov A. N., Salnikov A. S. Physical simulation of GaN/AlGaN HEMT-heterostructures and power microwave transistors using Synopsys software. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2012, no. 2(26), – p. 2. pp. 145–151.
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