Abstract: The article provides an overview of schemes and the characteristics of modern microwave monolithic power amplifiers (PA). The advantages of microwave transistors based on wideband semiconductor materials (silicon carbide SiC and gallium nitride GaN) are described. This review will be useful to engineers involved in the design of microwave devices.
Keywords: power amplifier, monolithic microwave integrated circuit, gaas hemt, gan hemt
For citation:
Kokolov A. A., Cherkashin M. V. Construction and performance of modern MMIC based on GaAs and GaN. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 2. pp. 17–23.
Authors and copyright holders:
- Kokolov A. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Cherkashin M. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
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