Review of mathematical models of microwave high electron mobility transistors

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Authors: Kokolov A. A., Sheerman F. I., Babak L. I.

Annotation: The classification and review of mathematical models of microwave high electron mobility transistors (HEMTs) are presented. The desription of HEMT models is based on the modern general model classification of semiconductor devices. The review is intended for microwave designing engineers.

Keywords: classification, nonlinear model, microwave transistor, hemt