Abstract: The classification and review of mathematical models of microwave high electron mobility transistors (HEMTs) are presented. The desription of HEMT models is based on the modern general model classification of semiconductor devices. The review is intended for microwave designing engineers.
Keywords: classification, nonlinear model, microwave transistor, hemt
For citation:
Kokolov A. A., Sheerman F. I., Babak L. I. Review of mathematical models of microwave high electron mobility transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 118–123.
Authors and copyright holders:
- Kokolov A. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Sheerman F. I. , Research Institute «Microelectronic Systems» (Tomsk, Russia)
- Babak L. I. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
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