Abstract: The classification and review of mathematical models of microwave high electron mobility transistors (HEMTs) are presented. The desription of HEMT models is based on the modern general model classification of semiconductor devices. The review is intended for microwave designing engineers.
Keywords: classification, nonlinear model, microwave transistor, hemt
For citation:
Kokolov A. A., Sheerman F. I., Babak L. I. Review of mathematical models of microwave high electron mobility transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 118–123.
Authors and copyright holders:
- Kokolov A. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Sheerman F. I.
- Babak L. I.
—
Last issue
-2026-1_%D0%BA%D0%BE%D0%BF%D0%B8%D1%8F.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
