Abstract: The paper describes an extraction technique of nonlinear EEHEMT model for heterostructure microwave field-effect transistors without using expensive extraction software. The main stages of model extraction including DC and AC parameter determination are considered. Simulated and measured characteristics of 0,3 m GaAs pHEMT transistor were compared and satisfactory results were achieved.
Keywords: microwave transistor, nonlinear model, microwave monolithic integrated circuits
For citation:
Kokolov A. A., Babak L. I. Extraction technique of nonlinear EEHEMT model for heterostructure microwave field-effect transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 149–152.
Authors and copyright holders:
- Kokolov A. A. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Babak L. I.
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