Extraction technique of nonlinear EEHEMT model for heterostructure microwave field-effect transistors

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Authors: Kokolov A. A., Babak L. I.

Annotation: The paper describes an extraction technique of nonlinear EEHEMT model for heterostructure microwave field-effect transistors without using expensive extraction software. The main stages of model extraction including DC and AC parameter determination are considered. Simulated and measured characteristics of 0,3 m GaAs pHEMT transistor were compared and satisfactory results were achieved.

Keywords: microwave transistor, nonlinear model, microwave monolithic integrated circuits