Abstract: A powerful AlGaN/GaN high electron mobility transistor for X- and Ku-band is presented. Selected design heteroepitaxial structure layers of developed transistor parameters allow to achieve static and microwave performance closed to their foreign counterparts CGHV1J006D by Cree Inc. Unlike this transistor the presented one was carried out by shorter dual air bridges to connect separate transistor section instead of plated holes. Drain current in pulsed mode is IDmax = 1.1 A, the breakdown voltage is 60 V, the small-signal gain at 10 GHz is GSS ≈ 14 dB. Estimation of the maximum output power in the pulsed mode is Psat ≈ 6.8 W. Unlike analog CGHV1J006D characteristics of the developed transistor were supplemented his small-signal model.
Keywords: algan/gan, hemt, pulse microwave-static and power characteristics, linear model
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For citation:
Torhov N. A., Bozhkov V. G., Dobush I. M., Salnikov A. S., Babak L. I. Powerful AlGaN/GaN HEMT- transistors X- and Ku-band. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2015, no. 1(35), pp. 52–55.
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