Investigation of degradation of GaN based semiconductor structures
DOI: 10.21293/1818-0442-2017-20-4-23-25
Abstract: This paper contains mechanical strength analysis for GaN based light emitting diode structure. An evaluation of role of thermoplastic deformation in expansion of defect areas in consideration of new defect formation in the GaN based semiconductor heterostructure is carried out.
Keywords: dislocation, gallium nitride, heterostructure, mechanical strength
Authors and copyright holders:
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For citation:
Ehanin S. G., Tomashevich A. A. Investigation of degradation of GaN based semiconductor structures. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2017, vol. 20, no. 4, pp. 23–25. DOI: 10.21293/1818-0442-2017-20-4-23-25
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