The creation of an electronic memory device with properties similar to organic synapse

Abstract: The paper is devoted to research in the field of solid-state neuromorphic electronics. The requirements for stability and reproducibility of the characteristics of solid-state analogues of synapses – memristors and meeting these requirements devices fabrication methods are discussed. The experiment of obtaining multilayer thin-film electronic device based on mixed metal oxide Al:TiO 2 and its results are described. The current-voltage curves of the obtained solid element are presented and significant non-linearity of these CVCs is noted. Time-dependent effects in memristor switching process are described. The organic synapse properties reproduced in solid element and possibility of the fabricated device usage as a summing element of an artificial neuron are described.

Keywords: reactive magnetron sputtering, memristor, synapse