Abstract: A new manufacturing process was developed for optimization of ohmic contacts for AlGaN/GaN High Electron Mobility Transistors on silicon carbide, silicon and sapphire substrates. It has been demonstrated that by using Ti/Al/Mo/Au metallization, ohmic contacts with both smooth surface morphology and a low contact resistance (0.3–0.5 Ohm*mm) can be obtained.
Keywords: high electron mobility transistor (hemt), rapid thermal annealing (rta), ohmic contacts, transmis- sion line method (tlm), gallium nitride (gan)
Authors and copyright holders:
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For citation:
Velikovskiy L. E., Sim P. E. Optimization of ohmic contacts for AlGaN/GaN high electron mobility transistors. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 3(33), pp. 66–69.
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