Formation of the ohmic contact to the n-layer of gallium nitride using the pre-ionic treatment
DOI: 10.21293/1818-0442-2017-20-2-43-45
Abstract: The results of measurements of the specific contact resistance to the n-layer of gallium nitride of the Ti/Al/Ni/Au system are presented. The effect of the parameters of pre-ionic surface treatment, namely the gas flow rate and the process time, on the value of the specific contact resistance was investigated. For the first time the dependence of the specific contact resistance on the annealing temperature after pre-ionic surface treatment was obtained.
Keywords: light-emitting diode, gallium nitride, ohmic contact, ionic treatment
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For citation:
Zasuhin D. I., Minin O. N., Viktorova E. A. Formation of the ohmic contact to the n-layer of gallium nitride using the pre-ionic treatment. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2017, vol. 20, no. 2, pp. 43–45. DOI: 10.21293/1818-0442-2017-20-2-43-45
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