Abstract: The research is devoted to modelling of a sedimentation process of nano-layers for passivation of a T-gate. In the paper we investigated general TCAD sedimentation models, their usage for refilling of complex profiles. We analyzed a mathematical tool for technological modelling, namely a string model and a Monte-Carlo method. As a result we offer modelling of passivation of a T-gate by Monte-Carlo method at different temperatures and we give recommendations for practical implementation of this operation.
Keywords: t-gate, tcad, monte-carlo method, nano-layers sedimentation
Authors and copyright holders:
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For citation:
Danilina T. I., Skotnikov N. V. Modelling of sedimentation process on complex profiles. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2012, no. 2(26), – p. 2. pp. 179–181.
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