Abstract: The precise technology of 50 nm GaAs MHEMT has been developed along with the method for making of scalable small-signal equivalent circuits and noise models of MHEMT with Ft up to 300 GHz. The simulation results are given in comparison with S-parameters and noise figure measurements for T-gate widths of 2x30 up to 2x80 um and lengths of 50 to 250 nm.
Keywords: mhemt, small-signal model, noise model, noise figure
Authors and copyright holders:
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For citation:
Mihaylovich S. V., Fyodorov Yu. V., Bugaev A. S., Galiev R. R., Yachmenyov A. E., Scherbakova M. Yu. On the making of scalable noise model of GaAs MHEMT with Lg of 50 to 250 nm. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 2. pp. 31–35.
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