Abstract: In this article we investigate light-emitting diode structures of InGaN/GaN in two different designs. The research concerns the structure with five quantum wells as active region and with the addition of AlGaN layer, with different configurations of active regions. The influence of AlGaN layer on luminescent characteristics of structures is shown.
Keywords: light-emitting diode, gallium nitride, quantum well
For citation:
Romanov I. S., Marmalyuk A. A., Voytsehovskiy A. V., Kohanenko A. P. Light-emitting diode structures of InGaN/GaN grown by the method of metal organic chemical vapor deposition. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 2. pp. 151–153.
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