Fabrication of micro-relief surfaces in anti-reflection coatings in order to enhance the external quantum efficiency of dark blue light-emitting diodes based on GaN

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Authors: Danilina T. I., Troyan P. E., Chistoedova I. A.

Annotation: This work is devoted to research of the opportunity of surfaces micro-relief formation in anti-reflection coatings deposited on GaN substrates. It is offered to use SiO2 films as anti-reflection coatings in which the micro-relief surface with regular structure is formed by means of electron beam lithograph. Using electron beam lithograph the micro-relief in the form of nanoedges with distance between them of 500 nanometers and the basis diameter of 284 nanometers. Thus the nanoedges density of 1,4·10^7 obj/sm2 is received.

Keywords: clarifying coverings, micro-relief, electron beam lithograph, nanoedges