Abstract: This work is devoted to research of the opportunity of surfaces micro-relief formation in anti-reflection coatings deposited on GaN substrates. It is offered to use SiO2 films as anti-reflection coatings in which the micro-relief surface with regular structure is formed by means of electron beam lithograph. Using electron beam lithograph the micro-relief in the form of nanoedges with distance between them of 500 nanometers and the basis diameter of 284 nanometers. Thus the nanoedges density of 1,4·10^7 obj/sm2 is received.
Keywords: clarifying coverings, micro-relief, electron beam lithograph, nanoedges
Authors and copyright holders:
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For citation:
Danilina T. I., Troyan P. E., Chistoedova I. A. Fabrication of micro-relief surfaces in anti-reflection coatings in order to enhance the external quantum efficiency of dark blue light-emitting diodes based on GaN. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2011, no. 2(24), – p. 2. pp. 64–67.
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