Abstract: The results of nonlinear model reconstruction of a 600 m Schottky-gate field-effect transistor produced by using the GaAs pHEMT technology («Micran») are presented. The model parameters reconstruction is based on measurement of small-signal scattering parameters and current-voltage characteristics in the continuous mode.
Keywords: monolithic integrated circuit, mesfet, nonlinear model, iv curves, scattering parame- ters
For citation:
Barov A. A., Bidnenko Yu. N., Kondratenko A. V. Reconstruction of nonlinear model of GaAs pHEMT transistor. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2010, no. 2(22), – p. 1. pp. 137–139.
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