Reconstruction of nonlinear model of GaAs pHEMT transistor

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Authors: Barov A. A., Bidnenko Yu. N., Kondratenko A. V.

Annotation: The results of nonlinear model reconstruction of a 600 m Schottky-gate field-effect transistor produced by using the GaAs pHEMT technology («Micran») are presented. The model parameters reconstruction is based on measurement of small-signal scattering parameters and current-voltage characteristics in the continuous mode.

Keywords: monolithic integrated circuit, mesfet, nonlinear model, iv curves, scattering parame- ters