Mathematical model of the noise in polycrystalline n-CdSe

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Authors: Davydov V. N., Haritonov S. V.

Annotation: Based on the analysis of experimental dependences of the noise variance semiconductor photoresist on the bias voltage and power illumination, a mathematical expression has been constructed that describes the noise on-voltage polycrystalline n-CdSe, just in a wide range of displacements and flare capacities. It is shown that the noise properties of the n-CdSe may be interpreted as the result of adding dispersions fluctuations two independent sources EMF fluctuation parameters which vary linearly with the bias voltage and modified as a function of Gaussian depending of power illumination. A physical interpretation of the constructed model is provided.

Keywords: mathematical model, noise, modified gaussian distribution, backlighting