Mathematical model of the noise in polycrystalline n-CdSe

Abstract: Based on the analysis of experimental dependences of the noise variance semiconductor photoresist on the bias voltage and power illumination, a mathematical expression has been constructed that describes the noise on-voltage polycrystalline n-CdSe, just in a wide range of displacements and flare capacities. It is shown that the noise properties of the n-CdSe may be interpreted as the result of adding dispersions fluctuations two independent sources EMF fluctuation parameters which vary linearly with the bias voltage and modified as a function of Gaussian depending of power illumination. A physical interpretation of the constructed model is provided.

Keywords: mathematical model, noise, modified gaussian distribution, backlighting

For citation:
Davydov V. N., Haritonov S. V. Mathematical model of the noise in polycrystalline n-CdSe. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2017, vol. 20, no. 1, pp. 53–56. DOI: 10.21293/1818-0442-2017-20-1-53-56