Abstract: Silvaco TCAD system was studied. The model of GaAs pHEMT was obtained. IV curves and S-parameters of this device were received
Keywords: gaas phemt, tcad, recess etching
For citation:
Vatyuk A. A. Modeling of GaAs pHEMT parameters in Silvaco TCAD. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2016, vol. 19, no. 1, pp. 69–72.
Authors and copyright holders:
—
Last issue
-2026-1_%D0%BA%D0%BE%D0%BF%D0%B8%D1%8F.jpg)
Editorial office address
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 701-582
Viktor N. Maslennikov
Executive Secretary of the Editor’s Office
Editor’s Office: 40 Lenina Prospect, Tomsk, 634050, Russia
Phone / Fax: + 7 (3822) 51-21-21 / 51-43-02
Subscription for updates
