Abstract: In the research we investigated the influence of technological parameters of equipment on silicon nitride films deposited by inductively coupled plasma CVD, with the aim to elaborate the optimal mode for obtaining the stoichiometric Si 3 N 4 .
Keywords: concentration of atomic bonds, fitting peaks, technological parameters of the deposition
For citation:
Kutkov I. V., Pehtelev M. I. Qualitative and quantitative analysis of silicon nitride films using by IR spectroscopy. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2014, no. 1(31), pp. 92–94.
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