Photoelectric Characteristics of Gallium Oxide-Based Photodetectors over a Wide Temperature and Voltage Range
DOI: 10.21293/1818-0442-2025-28-4-162-168
Abstract: Gallium oxide filmы were deposited on a sapphire substrates by radio-frequency magnetron sputtering. Post-deposition annealing at 900 °C in argon for 30 minutes yielded polycrystalline β-phase Ga2O3 films with high stoichiometric quality. The resulting films had a thickness of 390 nm and exhibited a transmittance exceeding 70% in the long-wavelength region λ ≥ 310 nm. The band gap of the film increased from 4,74 to 4,87 eV as the temperature decreased from 350 to 10 K. The photoconductivity of structures at temperatures below 150 K is governed by the space-charge-limited currents. The photodetectors demonstrated extremely low dark currents (≤ 20 pA) and a maximum photosensitivity of 1.42 A/W at 150 K and 1100 V, indicating an internal gain mechanism. Time-dependent photoresponse analysis revealed a decrease in rise time from 65 ms to 32 ms and in decay time from 34 to 7 ms as the temperature increased from 10 to 350 K.
Keywords: Ga2O3, photodetector, UV-radiation, photoconductivity, gain
Funding: The study was supported by the Tomsk State University Development Programme (Priority-2030), Project No. 2.5.4.25 ML.
For citation:
Almaev D. A., Tsymbalov A. V., Kopiev V. V. Photoelectric Characteristics of Gallium Oxide-Based Photodetectors over a Wide Temperature and Voltage Range. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2025, vol. 28, no. 4, pp. 162–168. DOI: 10.21293/1818-0442-2025-28-4-162-168
Authors and copyright holders:
- Almaev D. A. , Tomsk State University (Tomsk, Russia), Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Tsymbalov A. V. , Tomsk State University (Tomsk, Russia)
- Kopiev V. V. , Tomsk State University (Tomsk, Russia)
- 1. Fei Z., Chen Z., Chen W., Chen S., Wu Z., Lu X., Wang G., Liang J., Pei Y. ε-Ga2O3 thin films grown by metal-organic chemical vapor deposition and its application as solar-blind photodetectors. Journal of Alloys and Compounds, 2022, vol. 925, P. 166632.
- 2. Zhao T., He H., Wu C., Lai L., Ma Y., Yang H., Hu H., Liu A., Guo D., Wang S. Nanoscale-Thick CuPc/β-Ga2O3 p-n–Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors. ACS Appl. Nano Mater, 2023, vol. 6, no. 5, pp. 3856–3862.
- 3. Kalygina V.M, Nikolaev V.I., Almaev A.V., Tsymbalov A.V., Petrova Yu.S., Pechnikov I.A., Butenko P.N. Properties of resistive structures based on polymorphic phases of gallium oxide. Technical Physics Letters, 2020, vol. 46, pp. 867–870.
- 4. Pearton S.J., Yang J., Cary P.H., Ren F., Kim J., Tadjer M.J., Mastro M.A. A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev., 2018, vol. 5, no. 1, pp. 011301.
- 5. Almaev A., Tsymbalov A., Kushnarev B., Nikolaev V., Pechnikov A., Scheglov M., Chikiryaka A. Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance. J. Semicond, 2024, vol. 45, no. 8, pp. 082502.
- 6. Hou X., Zou Y., Ding M., Qin Y., Zhang Z., Ma X., Tan P., Yu S., Zhou X., Zhao X., Xu G., Sun H., Long S. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications. J. Phys. D: Appl. Phys., 2021, vol. 54, no. 4, pp. 043001
- 7. Kaur D., Kumar M. A strategic review on gallium oxide based deep-ultraviolet photodetectors: Recent progress and future prospects. Adv. Opt. Mater., 2021, vol. 9, no. 9, pp. 2002160.
- 8. Chen X., Ren F., Gu S., Ye J. Review of gallium-oxide-based solar-blind ultraviolet photodetectors. Photon. Res., 2019, vol. 7, no. 4, pp. 381–415.
- 9. Kalygina V.M., Almaev A.V., Novikov V.A., Petrova Yu.S. [Solar-blind UV detectors based on β-Ga2O3 films]. Semiconductors, 2020, vol. 54, no 6., pp. 575–579 (in Russ.).
- 10. Almaev A., Tsymbalov A., Kushnarev B., Nikolaev V., Pechnikov A., Scheglov M., Chikiryaka A., Korusenko P. High-speed performance self-powered shortwave ultraviolet radiation detectors based on κ (ε)-Ga2O3. J. Semicond, 2024, vol. 45, no. 4, pp. 042502.
- 11. Khan S.A., Saha S., Singisetti U., Bhuiyan A.U. Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation. J. Appl. Phys., 2024, vol. 136, no. 22, pp. 225701.
- 12. Xue D., Lv P., Peng K., Hu Q., Chen C. High-performance a-Ga2O3 solar-blind photodetectors by pulsed magnetron sputtering deposition. J. Vac. Sci. Technol. A., 2024, vol. 42, no. 3, pp. 033403.
- 13. Kalygina V.M., Tsymbalov A.V., Almaev A.V., Petrova Yu.S. [Influence of electrode topology on the parameters of solar-blind UV detectors]. Semiconductors, 2021, vol. 55, no. 3, pp. 264–268 (in Russ.).
- 14. He. M., Zeng Q., Ye L. A Highly Transparent β-Ga2O3 Thin Film-Based Photodetector for Solar-Blind Imaging. Crystals, 2023, vol. 13, no. 10, pp. 1434.
- 15. Wang J., Ji X., Yan Z., Qi S., liu X., Zhong A., Li P. The role of oxygen vacancies in Ga2O3-based solar-blind photodetectors. J. Alloys Compd., 2024, vol. 970, pp. 172448.
- 16. Gao X., Xie T., Wu J., Fu J., Gao X., Xie M., Zhao H., Wang Y., Shi Z. Ultraviolet communication system utilizing effective performance β-Ga2O3 photodetector. Appl. Phys. Lett., 2024, vol. 125, no. 17, pp. 172103.
- 17. Li L.J., Li C.K., Wang S.Q., Lu Q., Jia Y.F., Chen H.F. Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance. J. Semicond., 2023, vol. 44, no. 6, pp. 062805.
- 18. Wang C., Fan W.-H., Zhang Y.-C., Kang P.-C., Wu W.-Y., Wuu D.-S., Lien S.-Y., Zhu W.-Z. Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector. Ceram. Int., 2023, vol. 49, no. 7, pp. 10634–10644.
- 19. Wang J., Ye L., Wang X., Zhang H., Li L., Kong C., Li W. High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector. J. Alloys Compd., 2019, vol. 803, pp. 9–15.
- 20. Kalygina V., Tsymbalov A., Almaev A., Petrova A., Podzyvalov S. Investigation of the Persistence Conductivity and Photoelectric Characteristics in Detectors with Interdigital Electrodes Based on β-Ga2O3. Phys. Status Solidi B, 2022, vol. 259, no. 2, pp. 2100341.
- 21. Yang H., Cheng T.-H., Xin Q., Liu Y., Feng H.Y., Luo F., Mu W., Jia Z., Tao X. Efficient suppression of persistent photoconductivity in β-Ga2O3-based photodetectors with square nanopore arrays. ACS Appl. Mater. Interfaces, 2023, vol. 15, no. 27, pp. 32561–32568,
- 22. Kalygina V.M., Tsymbalov A.V., Korusenko A.V., Koroleva A.V., Zhizhin E.V. Effect of traps on the UV sensitivity of gallium oxide-based structures. Crystals, 2024, vol. 14, no. 3, pp. 268.
- 23. Polyakov A.Y., Almaev A.V., Nikolaev V.I., Pechnikov A.I., Shchemerov V.I., Vasilev A.A., Yakimov E.B., Kochkova A.I., Kopyev V.V., Kushnarev B.O., Pearton S.J. Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors. ECS J. Solid State Sci. Technol., 2023, vol. 12, pp. 045002.
- 24. Almaev D.A., Tsymbalov A.V., Kopyev V.V. Bystrodeystvuyushchiye detektory UF-izlucheniya na osnove plenok Ga2O3 [High-speed UV radiation detectors based on Ga2O3 films]. Technical Physics, 2025, vol. 95, no. 11, pp. 2229–2234 (in Russ.).
- 25. Polyakov A.Y., Yakimov E.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Nikolaev V.I., Pearton S.J. Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers. J. Phys. D: Appl. Phys., 2024, vol. 58, no. 6., pp. 063002.
- 26. Sun X., Wang Z., Gong H., Chen X., Zhang Y., Wang Z. M-Plane α-Ga-O-Solar-Blind Detector with Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability. IEEE Electron. Device Lett., 2022, vol. 43, no. 4, pp. 541–544.
- 27. Tak B.R., Garg M., Dewan S., Torres-Castanedo C.G., Li K.-H., Gupta V., Li X., Singh R. High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors. J. Appl. Phys., 2019, vol. 125, no. 14, pp. 144501.
- 28. Cho H.H., Lee S.H., Kim D., Yu H.K., Choi J.-Y., Park J.-H. Fabrication of UV-C photodetector with ultimate stability in extreme space environments (radiation, low temperature) using aerosol-deposited Ga2O3. Ceram. Int., 2019, vol. 49, no. 18, pp. 30375–30380.
- 29. Moss T.S., Burrell G.J., Ellis B. Semiconductor Opto-Electronics. Halsted Press Division, Wiley, NC, USA, 1973, 441 p.
- 30. Girolami M., Bosi M., Pettinato S., Ferrari C., Lolli R., Seravalli L., Serpente V., Mastellone M., Trucchi D.M., Fornari R. Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates. Materials, 2024, vol. 17, no. 2, pp. 519.
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