Review of technology for manufacturing monolithic inte-grated circuits for the microwave range
DOI: 10.21293/1818-0442-2024-27-4-23-30
Abstract: Modern microwave technology places serious requirements on the electronic component base. When manufacturing monolithic integrated circuits (MIC), a large number of types of conductors are used, that have their own boundary parameters and dimensions. Taking into account these limitations, the task arises to choose a technology (material) that will ensure the fulfillment of technical tasks during the development of microwave MIC. At the moment, when creating microwave integrated circuits, the leading ones are the technologies that use semiconductors made from galium arsenide (GaAs) and galium nitride (GaN). The work provides a review and a comparative analysis of the fabrication of MMICs using GaAs and GaN technologies in Russia and abroad. This material can be used in the design of microwave MIC and contribute to the implementation of technical specifica-tions.
Keywords: monolithic integrated circuit, low-noise amplifier, technology, topology, transistor, microwave power
For citation:
Mihaylenko V. E., Zabolotskiy A. M. Review of technology for manufacturing monolithic inte-grated circuits for the microwave range. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2024, vol. 27, no. 4, pp. 23–30. DOI: 10.21293/1818-0442-2024-27-4-23-30
Authors and copyright holders:
- Mihaylenko V. E. , JSC «NPF Micran» (Tomsk, Russia)
- Zabolotskiy A. M. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
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