Abstract: In this paper we discuss formation of Ti/Au and Ti/Al/Mo/Au-based nonalloyed ohmic contacts to AlGaN/GaN heterostructure. Selective epitaxy of highly doped n+Al 0.05 Ga 0.95 N was used for this. Obtained contacts were annealed at different temperatures and Rс and I–V characteristics were obtained and examined.
Keywords: nonalloyed ohmic contacts, contact resistance, algan/gan heterostructure, selective epitaxy of gan
For citation:
Skubo V. V., Sim P. E., Velikovskiy L. E., Polivanova Yu. N., Tsatsulnikov A. F. Investigation of properties of nonalloyed ohmic contacts to the heterostructure AlGaN/GaN. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2015, no. 4(38), pp. 76–78.
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