Abstract: In this article were studied electrical properties of the titanium dioxide films, which were obtained by magnetron sputtering cathode of titanium, stoichiometric (TiO 2 ) and unstoichiometric (TiO x ) compositions used for creating the elements of non-volatile memristor’s memory. It shown that unstoichiometric TiO x films have higher conductivity. In structures with two layers of dielectric TiO 2 -TiO x the electric strength is determined by the electric strength of the TiO 2 films. The values of dielectric permittivity TiO 2 and TiO x films differ significantly.
Keywords: titanium oxide film, electrical parameters
For citation:
Troyan P. E., Nagaychuk S. G., Argunov D. P., Zmanovskiy P. A., Pilipets I. V. Electrical parameters study of the titanium oxide films used for memristor’s structures' design. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2015, no. 4(38), pp. 64–67.
Authors and copyright holders:
- Troyan P. E. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
- Nagaychuk S. G.
- Argunov D. P. , JSC "NIIPP" (Tomsk, Russia)
- Zmanovskiy P. A.
- Pilipets I. V.
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