Electrical parameters study of the titanium oxide films used for memristor’s structures' design

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Authors: Troyan P. E., Nagaychuk S. G., Argunov D. P., Zmanovskiy P. A., Pilipets I. V.

Annotation: In this article were studied electrical properties of the titanium dioxide films, which were obtained by magnetron sputtering cathode of titanium, stoichiometric (TiO 2 ) and unstoichiometric (TiO x ) compositions used for creating the elements of non-volatile memristor’s memory. It shown that unstoichiometric TiO x films have higher conductivity. In structures with two layers of dielectric TiO 2 -TiO x the electric strength is determined by the electric strength of the TiO 2 films. The values of dielectric permittivity TiO 2 and TiO x films differ significantly.

Keywords: titanium oxide film, electrical parameters