Piro-and piezoeffects in light-emitted MQW heterostructure

Abstract: The main mechanisms of internal field polarization in InGaN/GaN heterostructures are analized. The basic components of the field polarization within the layers of the heterostructure are calculated by means of tensor calculus methods. We propose to compensate the application of intrinsic polarization to lateral faces of elastic stress heterostructures, which due to the direct piezoelectric effect anisotropy would create an electric field of equal magnitude and opposite direction. The value of the elastic stress from an external source is calculated.

Keywords: pyroeffect, direct and inverse piezoeffect, ingan/gan heterostructure, external compensating elastic stress

For citation:
Davydov V. N., Oleynik V. L. Piro-and piezoeffects in light-emitted MQW heterostructure. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2013, no. 4(30), pp. 71–75.