Proceedings of TUSUR University / Archive / Issue of Journal № 3, t. 28, 2025 / Reflective and absorptive SPDT switches in the frequency range from 10 MHz to 67 GHz based on 0.1 pHEMT GaAs-technology

Reflective and absorptive SPDT switches in the frequency range from 10 MHz to 67 GHz based on 0.1 pHEMT GaAs-technology

DOI: 10.21293/1818-0442-2025-28-3-7-13

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Abstract: The article presents the stages of development of microwave monolithic integrated circuits for reflective and absorptive SPDT switches operating in the broad frequency band from 10 MHz to 67 GHz, fabricated using 0.1 μm GaAs-pHEMT-technology. The switch circuits, modeling process, and experi-mental investigation of the integrated circuits are described. A comparison of the obtained parameters with the current state-of-the-art on various technologies is presented. A method for in-creasing inter-channel isolation of the switches with a figure of more than 32 dB is proposed, while ensuring insertion loss in the open channel of less than 3.4 dB in the frequency range up to 67 GHz.

Keywords: switch, ultra-wideband, pHEMT, SPDT, monolithic microwave integrated circuit, gallium arsenide, isolation, Schottky field effect transistor, microwave

For citation:
Hmara I. V., Danilov D. S., Zagorodniy A. S., Sharangovich S. N. Reflective and absorptive SPDT switches in the frequency range from 10 MHz to 67 GHz based on 0.1 pHEMT GaAs-technology. Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniya i radioelektroniki, 2025, vol. 28, no. 3, pp. 7–13. DOI: 10.21293/1818-0442-2025-28-3-7-13

Authors and copyright holders:

Hmara I. V. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Danilov D. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Zagorodniy A. S. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)
Sharangovich S. N. , Tomsk State University of Control Systems and Radioelectronics (Tomsk, Russia)

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