Reflective and absorptive SPDT switches in the frequency range from 10 MHz to 67 GHz based on 0.1 pHEMT GaAs-technology

Authors: Hmara I. V., Danilov D. S., Zagorodniy A. S., Sharangovich S. N.

Annotation: The article presents the stages of development of microwave monolithic integrated circuits for reflective and absorptive SPDT switches operating in the broad frequency band from 10 MHz to 67 GHz, fabricated using 0.1 μm GaAs-pHEMT-technology. The switch circuits, modeling process, and experi-mental investigation of the integrated circuits are described. A comparison of the obtained parameters with the current state-of-the-art on various technologies is presented. A method for in-creasing inter-channel isolation of the switches with a figure of more than 32 dB is proposed, while ensuring insertion loss in the open channel of less than 3.4 dB in the frequency range up to 67 GHz.

Keywords: microwave, schottky field effect transistor, isolation, gallium arsenide, monolithic microwave integrated circuit, spdt, phemt, ultra-wideband, switch